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2N6661 90V, 4 Ohm, N-Channel, DMOS FET Philips View larger

2N6661 90V, 4 Ohm, N-Channel, DMOS FET Philips

1H4

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90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

Original Philips

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90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

Original Philips

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

KenmerkWaardeChannel TypeNMaximum Continuous Drain Current350 mAMaximum Drain Source Voltage90 VPackage TypeTO-39Mounting TypeThrough HolePin Count3Maximum Drain Source Resistance5 ΩChannel ModeEnhancementMaximum Gate Threshold Voltage2VMinimum Gate Threshold Voltage0.8VMaximum Power Dissipation6.25 WTransistor ConfigurationSingleMaximum Gate Source Voltage20 VNumber of Elements per Chip1Height6.6mmSeries2N6661Maximum Operating Temperature+150 °CMinimum Operating Temperature-55 °CForward Diode Voltage1.2VWidth9.398 Dia.mm

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