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2N6661 90V, 4 Ohm, N-Channel, DMOS FET Philips Bekijk groter

2N6661 90V, 4 Ohm, N-Channel, DMOS FET Philips

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90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

Original Philips

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90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

Original Philips

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

KenmerkWaarde
Channel Type N
Maximum Continuous Drain Current 350 mA
Maximum Drain Source Voltage 90 V
Package Type TO-39
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 5 Ω
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2V
Minimum Gate Threshold Voltage 0.8V
Maximum Power Dissipation 6.25 W
Transistor Configuration Single
Maximum Gate Source Voltage 20 V
Number of Elements per Chip 1
Height 6.6mm
Series 2N6661
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Forward Diode Voltage 1.2V
Width 9.398 Dia.mm

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